- Journal
- MECANIQUE & INDUSTRIES
- Année
- 2007
- Volume
- 8
- Numéro
- 3
- Pages
- 267-278
- Mois
- MAY-JUN
- DOI
- 10.1051/meca:2007048
Abstract
This paper treats a wide range of subjects related to the rise of AIN as actuation layer in MEMS, from its deposition conditions to accurate interferometric device characterization and physical parameters extraction. The case of AIN driven multilayered cantilevers has been considered. Parameters such as Young's modulus associated to the (002) orientation of the crystallites, residual thin film stresses, thermal expansion coefficient a and piezoelectric coefficient d(31) have been calculated using non approximated equations capable of taking into account multiple film stacking. The well oriented thin film exhibit approximately the same properties as the bulk material.